Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-05-02
2006-05-02
Ho, Tan (Department: 2821)
Coherent light generators
Particular active media
Semiconductor
C372S099000
Reexamination Certificate
active
07039085
ABSTRACT:
A semiconductor laser device includes a dielectric multilayer film with a reflectance of 40% or more, on at least one of optical exit faces of a laser chip. The dielectric multilayer film includes a film of tantalum oxide (Ta2O5) and another film of a dielectric oxide, such as aluminum oxide (Al2O3), and silicon oxide (SiO2). The tantalum oxide film has an optical absorption coefficient smaller than that of silicon (Si) and thermal stability in emission superior to that of titanium oxide (TiO2), thereby remarkably improving the catastrophic optical damage degradation level of the laser chip.
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Kunitsugu Yasuhiro
Matsuoka Hiromasu
Nakagawa Yasuyuki
Nishiguchi Harumi
Al-Nazer Leith
Ho Tan
Leydid, Voit & Mayer, Ltd.
Mitsubishi Denki & Kabushiki Kaisha
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