Semiconductor laser apparatus

Details Semiconductor laser apparatus Semiconductor laser apparatus

2005-08-31

2010-02-02

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C372S050121, C257SE27014, C257SE27015

Reexamination Certificate

active

07655953

ABSTRACT:
A sub-substrate, a blue-violet semiconductor laser device, an insulating layer, and a red semiconductor laser device are stacked in order on a support member through a plurality of fusion layers. The insulating layer is stacked on an n-side pad electrode of the blue-violet semiconductor laser device, and a conductive layer is formed on the insulating layer. The red semiconductor laser device is stacked on the conductive layer through a fusion layer. The conductive layer is electrically connected to a p-side pad electrode of the red semiconductor laser device. The n-side pad electrode of the blue-violet semiconductor laser device and the n-side pad electrode of the red semiconductor laser device are electrically connected to each other.

REFERENCES:
patent: 6807207 (2004-10-01), Shiomoto
patent: 2001/0050531 (2001-12-01), Ikeda
patent: 2004/0109481 (2004-06-01), Ikeda
patent: 2000-223791 (2000-08-01), None
patent: 2001-230502 (2001-08-01), None

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