Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-05-03
2005-05-03
Ip, Paul (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S044010
Reexamination Certificate
active
06888870
ABSTRACT:
A semiconductor laser has a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer formed on a first conduction-type semiconductor substrate. The second conduction-type cladding layer has a mesa-type stripe-shaped recessed portion in at least four spots, so as to form a central ridge portion, which constitutes a ridge-type current confinement portion, and two or more lateral ridge portions, which are positioned on both sides of the central ridge portion, have a height larger than to that of the central ridge portion, and include the second conduction-type cladding layer. An insulation film with a lower refractive index than the second conduction-type cladding layer is formed in a pair of stripes disposed respectively in the regions from the side surface of the second conduction-type cladding layer on both side surfaces of the central ridge portion toward the outside. The insulation film is not formed on the central ridge portion.
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Adachi Hideto
Asaka Hiroshi
Fukuhisa Toshiya
Imafuji Osamu
Kawata Toshiya
Ip Paul
Merchant & Gould P.C.
Vy Hung T
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