Semiconductor laser and a method for fabricating the same

Details Semiconductor laser and a method for fabricating the same Semiconductor laser and a method for fabricating the same

1994-07-29

1996-03-12

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 318

Patent

active

054992605

ABSTRACT:
An n-ZnMgSSe lower cladding layer, an n-ZnSSe light guiding layer, an undopad CdZnSe active layer, a p-ZnSSe light guiding layer, a p-ZnMgSSe upper cladding layer, and a p-ZnSe cap layer are successively formed on an n-GaAs substrate. Then, grooves and a ridge are formed in the respective p-type layers by etching. A current blocking layer formed by laminating SiO.sub.2 layers and TiO.sub.2 layers in multiple layers is formed so as to bury the grooves. On the top surface of the ridge where the current blocking layer is not formed, an upper electrode is formed. On the bottom surface of the n-GaAs substrate, a lower electrode is formed, and thus the ridge type semiconductor laser is fabricated. This semiconductor laser is capable of emitting blue light with an oscillating wavelength of around 500 nm. The current blocking layer of the lamination of the SiO.sub.2 and TiO.sub.2 layers allows effective confinement of both light and carriers and a drastic decrease in the threshold current for a laser oscillation.

REFERENCES:
patent: 5029175 (1991-07-01), Ohnaka et al.
patent: 5371756 (1994-12-01), Fujii
Haase et al, Appl. Phys. Lett. 59(11), vol. 59, No. 11, pp. 1272-1274, Sep. 1991, "Blue-Green Laser Diodes".

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