Semiconductor laser

Details Semiconductor laser Semiconductor laser

1997-06-17

1999-08-10

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

059369906

ABSTRACT:
A semiconductor laser includes an active layer and a current block structure where a p-type InP layer (a first layer), an n-type InP layer (a second layer), a p-type InP layer (a third layer) and an n-type InP layer (a fourth layer) are laminated, at least one layer selected from a non-doped InP layer, an n-type InP impurity controlled layer and a p-type InP impurity controlled layer being interposed in at least one interface selected from that between the p-type InP layer (the first layer) and the n-type InP layer (the second layer) and that between the n-type InP layer (the second layer) and the p-type InP layer (the third layer); where, the n-type or p-type InP impurity controlled layer is a layer having such an n-type or p-type, respectively, impurity concentration profile in the layer that the impurity concentration continuously decreases from the n-type InP layer (the second layer) side or from the p-type InP layer (the first or the third layer) side, respectively, to the other side until the concentration of the impurity reaches equal to or below 1.times.10.sup.17 cm.sup.-3, and the n-type or p-type , respectively, InP impurity controlled layer is formed so as to be adjacent to the same type InP layer.

REFERENCES:
patent: 5596592 (1997-01-01), Tanigami et al.
patent: 5692002 (1997-11-01), Mizutani
By K. Uomi et al., "Extremely Low Threshold (1.3 mA) 1.3-.mu.m Compressive-Strained-MQW 10-element Laser Arrays for High-density Optical Interconnects", Fifth Optoelectronics Conference Technical Digest, Jul. 1994, pp. 200 and 201.

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