Method of semiconductor solar energy device fabrication

Details Method of semiconductor solar energy device fabrication Method of semiconductor solar energy device fabrication

1977-04-25

1978-12-26

Dean, R.

Metal treatment

Compositions

Heat treating

136 89R, 357 30, 357 91, H01L 21263, H01L 3104

Patent

active

041314883

ABSTRACT:
This disclosure relates to a semiconductor solar energy device which is of the PN-type and utilizes a dielectric anti-reflective coating on the side of the device that faces the sunlight. The fabrication techniques used in making this semiconductor device include the use of a rough or textured pyramid shaped silicon surface beneath the anti-reflective coating to increase solar cell efficiency. Also, ion implantation is used to form the PN junction in the device. The ion implanted region located on the side of the device that is subjected to the sunlight is configured in order to permit metal ohmic contact to be made thereto without shorting through the doped region during sintering of the metal contacts to the semiconductor substrate. The dielectric anti-reflective coating, in one embodiment, is a composite of silicon dioxide and silicon nitride layers. The device is designed to permit solder contacts to be made to the P and N regions thereof without possibility of shorting to semiconductor regions of opposite type conductivity.

REFERENCES:
patent: 3150999 (1964-09-01), Rudenberg
patent: 3877058 (1975-04-01), Cricchi et al.
J. J. Cuomo et al., "Total Photon Absorption Solar Cell" IBM Tech. Disl. Bull. 18, (1957) 935.
C. R. Baraone et al., V-Grooved Si Solar Cells" Conf. Record, 11th IEEE Photospecialist Conf., May 6-8, 1975.
J. F. Allison et al., "A Comparison of the Conset Violet and Non-Reflective Cells", 10th Intersociety Energy Conversion Conf., Aug. 1975.
L. Forbes, "Photodiodes . . . for Improved Light Sensitivity," IBM Tech. Disl. Bull., 15 (1972) 1348.
C. L. Bertin, "Lateral Transistor with Built--In Electric Field," IBM Tech. Disl. Bull. 16 (1973) 280.

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