Semiconductor laser

Details Semiconductor laser Semiconductor laser

1985-05-09

1989-03-21

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 46, H01S 319

Patent

active

048150894

ABSTRACT:
A semiconductor laser includes a front mirror facet and a rear mirror facet. An Al.sub.2 O.sub.3 film coating is formed on the front mirror facet by electron beam evaporation so that the front mirror facet has a reflectance between 10 and 20%. A multi-layered coating is formed on the rear mirror facet so that the rear mirror facet has a reflectance higher than 90%.

REFERENCES:
patent: 3838359 (1974-09-01), Hakki et al.
patent: 4317086 (1982-02-01), Scifres et al.
patent: 4546481 (1985-10-01), Yamamoto et al.
Ladany et al., "Al.sub.2 O.sub.3 half-wave films for long-life CW lasers", Applied Physics Letters, vol. 30, No. 2, Jan. 15, 1977, pp. 87-88.
Streifer et al., "Reduction of GaAs Diode Laser Spontaneous Emission," Applied Physics Letters, vol. 37, No. 1, Jul. 1, 1980, pp. 10-12.
Ettenberg, "A New Dielectric Facet Reflector for Semiconductor Lasers," Applied Physics Letters, vol. 32, No. 11, Jun. 1978, pp. 724-725.
Patents Abstracts of Japan, vol. 8, No. 84--Apr. 18, 1984 Fujitsu K. K.
Patents Abstracts of Japan, vol. 9, No. 216--Sep. 3, 1985.

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