Semiconductor laser

Details Semiconductor laser Semiconductor laser

2007-11-27

2007-11-27

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

Reexamination Certificate

active

10825407

ABSTRACT:
A semiconductor laser device of the present invention includes: a first conductivity type cladding layer; an active layer; and a second conductivity type cladding layer, which are on a substrate. The semiconductor laser device further includes a stripe structure for injecting carriers therein. A width of the stripe is wider at a front end face of a resonator from which laser light is emitted than at a rear end face that is located on an opposite side of the front end face, and a reflectance of the front end face is lower than a reflectance of the rear end face. With this configuration, the injection of carriers into an active layer can be controlled in accordance with an optical intensity distribution along the resonator direction within the semiconductor laser, thus achieving a decrease in threshold current, an enhancement of a slope efficiency and an enhancement of a kink level. As a result, the semiconductor laser device can be provided so that stable laser oscillation in the fundamental transverse mode can be realized up to the time of a high optical output operation.

REFERENCES:
patent: 6055256 (2000-04-01), Nakatsuka et al.
patent: 6075801 (2000-06-01), Tamanuki et al.
patent: 6104738 (2000-08-01), Kitoh et al.
patent: RE37051 (2001-02-01), Welch et al.
patent: 6219366 (2001-04-01), Furushima
patent: 6301283 (2001-10-01), Chen et al.
patent: 6307873 (2001-10-01), Geels et al.
patent: 6404790 (2002-06-01), Narui et al.
patent: 6459840 (2002-10-01), Sato et al.
patent: 6516159 (2003-02-01), Tsunoda
patent: 6567446 (2003-05-01), Huang et al.
patent: 6928097 (2005-08-01), Chida
patent: 2002/0037021 (2002-03-01), Ohkubo
patent: 2003/0031222 (2003-02-01), Balsamo et al.
patent: 2003/0128729 (2003-07-01), Matsumura
patent: 2004/0008746 (2004-01-01), Schmidt et al.
patent: 2005/0163181 (2005-07-01), Takayama
patent: 1 039 599 (2000-09-01), None
patent: 8-340147 (1996-12-01), None
patent: 9-307181 (1997-11-01), None
patent: 2000-357842 (2002-12-01), None
patent: 2000-066046 (2003-03-01), None
patent: 2003-101139 (2003-04-01), None
patent: 2004-235396 (2004-08-01), None
“Semiconductor Laser”, Ohmsha, 1st edition, pp. 238, Oct. 25, 1994, Kenichi IGA; with partial translation.

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