Semiconductor interconnect barrier for fluorinated dielectrics

Details Semiconductor interconnect barrier for fluorinated dielectrics Semiconductor interconnect barrier for fluorinated dielectrics

1999-05-14

2000-04-25

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438758, 438771, 438783, H01L 2448

Patent

active

060543981

ABSTRACT:
A method is provided for forming tantalum adhesion/barrier layers on semiconductor channels or in vias in low dielectric constant, fluorinated dielectric layers. The dielectric layers are defluorinated using hydrogen, ammonia, methane, or silane plasma and a subsequent tantalum deposition forms a less fluorine reactive tantalum carbide or tantalum silicide. Tantalum or tantalum nitride is then deposited over the less reactive form of tantalum to form the adhesion/barrier for deposition of a subsequent seed layer and a conductive material to form the vias and channels.

REFERENCES:
patent: 4680612 (1987-07-01), Hieber et al.
patent: 5763010 (1998-06-01), Guo et al.

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