Semiconductor integrated device having uniform noise between a p

Static information storage and retrieval – Read/write circuit – Noise suppression

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365190, 365208, 357 51, G11C 702

Patent

active

051405555

ABSTRACT:
In a semiconductor integrated device having floating voltage portion pairs, a signal line crossing over or under the floating voltage portion pairs, and a non-floating voltage portion, a noise source equivalent to the signal line is provided between the floating voltage pairs and the non-floating voltage portion.

REFERENCES:
patent: 4291394 (1981-09-01), Nakano et al.
patent: 4914502 (1990-04-01), Lebowitz et al.
patent: 4916661 (1990-04-01), Nawaki et al.
patent: 4922459 (1990-05-01), Hidaka
"A 70 ns 256K DRAM with Bit-Line Shield", Koichiro Mashiko, et al, 8107 IEEE Journal of Solid-State Circuits, SC-19(1984) Oct., No. 5, New York, pp. 591-596.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor integrated device having uniform noise between a p does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated device having uniform noise between a p, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated device having uniform noise between a p will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1254092

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.