Semiconductor integrated device and method of fabrication...

Details Semiconductor integrated device and method of fabrication... Semiconductor integrated device and method of fabrication...

2005-11-29

2005-11-29

Crane, Sara (Department: 2811)

Semiconductor device manufacturing: process

Forming schottky junction

Using refractory group metal

C438S649000, C438S664000

Reexamination Certificate

active

06969671

ABSTRACT:
A diffusion layer3aof a silicon substrate, a polycrystalline silicon material10, or a gate electrode12is connected to a conductive film8through a titanium silicide film6within a contact hole5provided in an insulating film4. The titanium silicide film6is formed by the silicide reaction between a titanium film7and the silicon. The upper limit of the thickness of the titanium silicide film6, and the upper limit of the titanium film7are specified by the internal stress within the conductive film8.

REFERENCES:
patent: 4914500 (1990-04-01), Liu et al.
patent: 5565708 (1996-10-01), Ohsaki et al.
patent: 5661061 (1997-08-01), Usuami et al.
patent: 5683515 (1997-11-01), Nakajima et al.
patent: 5776814 (1998-07-01), Beasom
patent: 5834846 (1998-11-01), Shinriki et al.

Affiliated with

Also associated with

Rating

Semiconductor integrated device and method of fabrication... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated device and method of fabrication..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated device and method of fabrication... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3496925