Semiconductor integrated device

Details Semiconductor integrated device Semiconductor integrated device

2006-01-30

2008-10-28

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S100000, C257S002000, C438S096000

Reexamination Certificate

active

07443721

ABSTRACT:
A semiconductor non volatile memory device capable of multiple write operations with high reliability includes memory cells. Each memory cell of the device has a first electrode, a second electrode, and an information storage section between the two electrodes. A segregation of composing elements of the information storage section caused by applying a first current pulse from the first electrode to the second electrode is corrected by applying a second current pulse from the second electrode to the first electrode such that the composition of the storage section recovers to its original state.

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