Semiconductor integrated circuit with protection circuit against

Details Semiconductor integrated circuit with protection circuit against Semiconductor integrated circuit with protection circuit against

1995-12-19

1997-09-30

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257203, 257205, 257208, 257210, 257362, H01L 2701, H01L 2712, H01L 2362, H01L 310392

Patent

active

056728956

ABSTRACT:
Diodes rows are arranged at interval L in the same direction as that of arrangement of cell rows. Each of the diodes rows has a row of pn junctions each formed on a substrate and arranged along a track vertical to interconnection tracks. The interconnection between cells automatically connect the gates of MOS transistors to the diodes without the need for considering which gate should be connected to the diode. The length of wiring between the gate of MOS transistor and a diode is less than an upper limit value for preventing electrostatic breakdown at a gate oxide in a process of fabricating the semiconductor integrated circuit. Each of the pn junctions may be formed under necessary input signal lines, necessary ground line, the bottom of the drain of MOS transistor or under the power supply line outside of macrocell.

REFERENCES:
patent: 4922316 (1990-05-01), Sato
patent: 5587598 (1996-12-01), Hatanaka

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit with protection circuit against does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit with protection circuit against, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit with protection circuit against will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2259039