Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Patent
1996-08-16
1998-11-03
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
365207, G11C 700
Patent
active
058319107
ABSTRACT:
A semiconductor integrated circuit is provided in which a differential amplifier circuit such as a sense amplifier is operated at high speed even if the operating voltage is reduced. To achieve this, a MOS transistor for supplying the operating voltage to a drive line on the high-potential side of a differential amplifier circuit is of N-channel type and the amplitude of a switching control signal for controlling this transistor is the potential of the step-up voltage produced by stepping up a supply voltage in level. The output voltage of an internal step-up circuit for achieving a word-line selection level is utilizable as the step-up voltage.
REFERENCES:
patent: 4980799 (1990-12-01), Tobita
patent: 5097446 (1992-03-01), Shoji et al.
patent: 5402042 (1995-03-01), Madsen
patent: 5457421 (1995-10-01), Tanabe
patent: 5546026 (1996-08-01), Lin et al.
patent: 5668770 (1997-09-01), Itoh et al.
Nakamura et al., FA14.2: A 29ns 64Mb DRAM with Hierarchical Array.
Architecture, 1995 IEEE Int'l Solid-State Circuits Conference.
Abe Koichi
Arai Kouji
Kubota Noriaki
Sukegawa Shunichi
Suzuki Yukihide
Hitachi , Ltd.
Nelms David C.
Texas Instruments Incorporated
Tran Michael T.
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