Semiconductor integrated circuit switch matrix

Details Semiconductor integrated circuit switch matrix Semiconductor integrated circuit switch matrix

2005-07-15

2010-02-23

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S903000

Reexamination Certificate

active

07667276

ABSTRACT:
There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.

REFERENCES:
patent: 6191442 (2001-02-01), Matsufusa
patent: 6682963 (2004-01-01), Ishikawa
patent: 7067909 (2006-06-01), Reif et al.
patent: 553689 (1980-01-01), None

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