Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-11-25
1999-06-29
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257298, 257300, H01L 2708, H01L 2976, H01L 2994
Patent
active
059172118
ABSTRACT:
A semiconductor integrated circuit comprising first n-channel MISFETs constituting the memory cells of a storage system, second n-channel MISFETs constituting the peripheral circuits of the storage system, and third n-channel MISFETs constituting the output circuit among the peripheral circuits. The respective threshold voltages of the first n-channel MISFETs, the second n-channel MISFETs and the third n-channel MISFETs are decreased in that order when the respective gate lengths of those MISFETs are substantially the same.
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Nikkei Micro-Devices, May Issue, 1987, pp. 27-28.
Chikahara Tadashi
Enami Hiromichi
Funabashi Michimasa
Kadota Kazuya
Kaneko Hiroko
Clark S. V.
Hardy David B.
Hitachi , Ltd.
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