Semiconductor integrated circuit memory device

Static information storage and retrieval – Systems using particular element – Semiconductive

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365154, 357 41, G11C 1134, H01L 2704

Patent

active

046317058

ABSTRACT:
A semiconductor integrated circuit memory device having a plurality of static type memory cells is disclosed, which has a high degree of circuit integration with improved layout structure of wiring layers. One of power supply supply lines, for instance Vcc line, extends in parallel to a word line, and by utilizing a double metallic layer technique, the other power supply line, i.e. ground line, is also extended in parallel to the word line. For example, the ground line is made of a first aluminium layer, and the two data lines intersecting at right angles with the ground line are made of a second aluminium layer provided by the intermediary of an insulating layer. With such a structure, reduction in size of a memory cell can be achieved without restriction by the wiring layers.

REFERENCES:
patent: 4453175 (1984-06-01), Ariizumi et al.

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