Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-26
2005-04-26
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C257S369000, C257S357000, C257S274000, C438S128000, C438S275000, C438S290000
Reexamination Certificate
active
06885071
ABSTRACT:
A semiconductor integrated circuit which is capable of being manufactured with a higher packing density and a small-size structure of standard cells is described. In the semiconductor integrated circuit, substrate regions and source regions are shared by adjacent standard cells as well as common contact regions which are located inward displaced respectively from the centers of the substrate regions.
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Morimoto Toshiki
Sei Toshikazu
Suzuki Hiroaki
Umemoto Yasunobu
DLA Piper Rudnick Gray Cary US LLP
Flynn Nathan J.
Kabushiki Kaisha Toshiba
Wilson Scott R.
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