Semiconductor integrated circuit including P-channel MOS transis

Details Semiconductor integrated circuit including P-channel MOS transis Semiconductor integrated circuit including P-channel MOS transis

1992-07-30

1993-04-06

Clawson, Jr., Joseph E.

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

365181, 365226, 307264, 307363, 307451, 307475, G11C 706

Patent

active

052009211

ABSTRACT:
A semiconductor integrated circuit includes a first P-channel MOS transistor and a second P-channel MOS transistor. The drain of the first P-channel MOS transistor is connected to the gate of the second P-channel MOS transistor. The second P-channel MOS transistor has a threshold voltage (a gate potential with respect to a source potential) greater than that of the first P-channel MOS transistor.

REFERENCES:
patent: 5068553 (1991-11-01), Love
patent: 5073726 (1991-12-01), Kato et al.
patent: 5113097 (1992-05-01), Lee
patent: 5113434 (1992-05-01), Aizaki
patent: 5117131 (1992-05-01), Ochi et al.
Patent Abstracts of Japan, vol. 8, No. 231 (E-274), Oct. 24, 1984.

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