Error detection/correction and fault detection/recovery – Pulse or data error handling – Replacement of memory spare location – portion – or segment
Reexamination Certificate
2007-11-30
2009-08-18
Britt, Cynthia (Department: 2117)
Error detection/correction and fault detection/recovery
Pulse or data error handling
Replacement of memory spare location, portion, or segment
C714S711000, C714S718000
Reexamination Certificate
active
07577882
ABSTRACT:
The present invention provides a semiconductor integrated circuit having area efficiency and repair efficiency improved by sharing a redundant memory macro among a plurality of SRAM macros. Each of the plurality of memory macros1A1and1A2includes a memory cell array1A-3connected to word lines WL1to WL32and bit lines and a redundant circuit that replaces a defective bit line of the memory cell array to a normal bit line and a redundant bit line BLA65and outputs defect information to a redundant signal line RA. The redundant memory macro2A includes a redundant memory cell array connected to redundant word lines and the redundant bit line, and a first word line connection circuit that connects a word line corresponding to a memory macro to be repaired and disconnects a word line corresponding to a normal memory macro from the redundant word line.
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Akamatsu Hironori
Kurumada Marefusa
Britt Cynthia
Hamre Schumann Mueller & Larson P.C.
Nguyen Steve
Panasonic Corporation
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