Error detection/correction and fault detection/recovery – Pulse or data error handling – Replacement of memory spare location – portion – or segment
Reexamination Certificate
2002-11-19
2008-11-11
Louis-Jacques, Jacques (Department: 2117)
Error detection/correction and fault detection/recovery
Pulse or data error handling
Replacement of memory spare location, portion, or segment
C714S711000, C714S718000
Reexamination Certificate
active
07451363
ABSTRACT:
The present invention provides a semiconductor integrated circuit having area efficiency and repair efficiency improved by sharing a redundant memory macro among a plurality of SRAM macros. Each of the plurality of memory macros includes a memory cell array connected to word lines and bit lines and a redundant circuit that replaces a defective bit line of the memory cell array to a normal bit line and a redundant bit line and outputs defect information to a redundant signal line. The redundant memory macro includes a redundant memory cell array connected to redundant word lines and the redundant bit line, and a first word line connection circuit that connects a word line corresponding to a memory macro to be repaired and disconnects a word line corresponding to a normal memory macro from the redundant word line.
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Akamatsu Hironori
Kurumada Marefusa
Hamre Schumann Mueller & Larson P.C.
Louis-Jacques Jacques
Nguyen Steve
Panasonic Corporation
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