Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2005-02-22
2005-02-22
Chang, Daniel D. (Department: 2819)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000
Reexamination Certificate
active
06859917
ABSTRACT:
Disclosed is a semiconductor integrated circuit realizing improved operating speed, reduced power consumption in an active mode, reduced power consumption in a standby mode, and reduced area of a chip. A first logic gate using a first pair of potentials VDDL, VSSL having a relatively small potential difference as an operation power source and a second logic gate using a second pair of potentials VDDH, VSSH having a relatively large potential difference as an operation power source commonly use substrate potentials VBP, VBN of MIS transistors. The second logic gate has a relatively high driving capability, and the first logic gate can operate on relatively low power. The MIS transistor has a threshold voltage which increases by a reverse substrate bias and decreases by a forward substrate bias. By commonly using the substrate potential, even in the case where different substrate bias states are generated at both of the logic gates, MOS transistors of the logic gates can be formed in the common well region.
REFERENCES:
patent: 5266848 (1993-11-01), Nakagome et al.
patent: 5544068 (1996-08-01), Takimoto et al.
patent: 5583457 (1996-12-01), Horiguchi et al.
patent: 5614847 (1997-03-01), Kawahara et al.
patent: 6097043 (2000-08-01), Igarashi et al.
patent: 6242948 (2001-06-01), Makino
patent: 6380764 (2002-04-01), Katoh et al.
patent: 6769110 (2004-07-01), Katoh et al.
patent: 01-273332 (1989-11-01), None
patent: 02-084815 (1990-03-01), None
patent: 04-132252 (1992-05-01), None
patent: 04-137653 (1992-05-01), None
patent: 4-155863 (1992-05-01), None
patent: 04-211515 (1992-08-01), None
patent: 05-108194 (1993-04-01), None
patent: 05-299624 (1993-11-01), None
patent: 06-204437 (1994-07-01), None
patent: 07-050392 (1995-02-01), None
patent: 10-74843 (1998-03-01), None
patent: 11-195976 (1999-07-01), None
patent: 11-224901 (1999-08-01), None
Ichihashi Motoi
Shimazaki Yasuhisa
Chang Daniel D.
Miles & Stockbridge P.C.
Renesas Technology Corp.
LandOfFree
Semiconductor integrated circuit having high-speed and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit having high-speed and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit having high-speed and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3511775