Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-11-14
2000-02-01
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257382, 257401, 257758, 257920, H01L 2976, H01L 31113
Patent
active
060206128
ABSTRACT:
A semiconductor integrated circuit includes a gate extending in a first direction, a diffusion-layer region corresponding to the gate, and a plurality of backing wiring lines connected to the diffusion-layer region and extending in a first wiring layer in a second direction substantially perpendicular to the first direction. The semiconductor integrated circuit further includes connection wiring lines providing connections between the plurality of backing wiring lines and provided in a second wiring layer.
REFERENCES:
patent: 5554867 (1996-09-01), Ajika et al.
patent: 5864155 (1999-01-01), Melzner
patent: 5866933 (1999-02-01), Baukus et al.
patent: 5874764 (1999-02-01), Hsieh et al.
Kanda Hiromi
Sawamura Takahiro
Uchida Toshiya
Eckert II George C.
Fujitsu Limited
Saadat Mahshid
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