Semiconductor integrated circuit having a DRAM cell unit and a n

Details Semiconductor integrated circuit having a DRAM cell unit and a n Semiconductor integrated circuit having a DRAM cell unit and a n

1991-06-18

1993-10-05

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257298, 365145, 365149, H01L 2968

Patent

active

052508277

ABSTRACT:
A high density nonvolatilized semiconductor integrated circuit is comprised of a Dynamic RAM (DRAM) cell unit and a nonvolatile cell unit. The DRAM cell unit is comprised of a first transistor having its gate connected to a word line, its source connected to a bit line and its drain connected to a first capacitor. The first capacitor has its other electrode connected to a first line. The nonvolatile RAM cell unit is comprised of a second transistor having its gate connected to a second line, its source connected to the bit line and its drain connected to a second capacitor. The second capacitor has its other electrode connected to a third line. The second capacitor comprises a ferroelectric substance to which a reverse voltage is applied in order to read out its signal, and the first capacitor comprises a paraelectric substance to which such reverse voltage is not applied. The cycle life of the DRAM cell unit is thereby increased. Further, the composition of the integrated circuit having a smaller number of constituent elements allows high-density circuit formation.

REFERENCES:
patent: 4860254 (1989-08-01), Pott et al.
patent: 4893272 (1990-01-01), Eaton, Jr. et al.
patent: 4910708 (1990-03-01), Eaton, Jr. et al.
patent: 4962322 (1990-10-01), Chapman
patent: 5086412 (1992-02-01), Jafte et al.
patent: 5119154 (1992-06-01), Gnadinger
patent: 5155573 (1992-10-01), Abe et al.

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit having a DRAM cell unit and a n does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit having a DRAM cell unit and a n, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit having a DRAM cell unit and a n will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1006603