Semiconductor integrated circuit device with trench capacitor an

Details Semiconductor integrated circuit device with trench capacitor an Semiconductor integrated circuit device with trench capacitor an

1998-04-22

2000-11-21

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257313, H01L 27108

Patent

active

061506869

ABSTRACT:
A semiconductor integrated circuit device includes a p-silicon substrate, an n-buried layer formed in the substrate to divide the substrate into an upper region and a lower region, a trench formed from the surface of the substrate to the lower region of the substrate through the buried layer, and an electrode formed in the trench. The electrode forms an n-inversion layer using the buried layer as a carrier source, in the lower region of the semiconductor substrate by a field effect. The n-inversion layer constitutes a capacitor together with the electrode.

REFERENCES:
patent: 5793075 (1998-08-01), Alsmeier et al.
L. Nesbit et al., "A 0.6 .mu.m.sup.2 256Mb Trench DRAM Cell With Self-Aligned BuriEd Strap (Best)"; 1993; pp. 627-630, Dec. 1993.

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