Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-12-19
2000-08-08
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257351, 257392, 257402, H01L 2701
Patent
active
061005657
ABSTRACT:
MOS devices are formed on a wafer having a thick silicon layer 3a and a thin silicon layer 3b formed on a buried oxide film. The MOS device formed in the thick silicon layer 3a is activated in a partial depletion type mode. Further, the MOS device formed in the thick silicon layer 3b is activated in a perfect depletion type mode. Therefore, a low leakage current and a high-speed operation can be achieved simultaneously. It is thus possible to solve problems that an integrated circuit must be formed by either one of the partial depletion type device and the perfect depletion type device, and the low leakage current and the high-speed operation are hard to come to fruition simultaneously.
REFERENCES:
patent: 3473094 (1969-10-01), Dillon, Jr.
patent: 4665423 (1987-05-01), Akiya
patent: 5463238 (1995-10-01), Takahashi et al.
patent: 5656825 (1997-08-01), Kusumoto et al.
T. Douseki et al., "TP 5.4: A 0.5V SIMOX-MTCMOS Circuit With 200ps Logic Gate," 1996 IEEE International Solid-State Circuits Conference, vol. Thirty-Nine, ISSN 0193-6530, Feb. 8, 9 and 10, 1996, cover page, and pp. 84, 85, 423.
Mitsubishi Denki & Kabushiki Kaisha
Prenty Mark V.
LandOfFree
Semiconductor integrated circuit device with operation in partia does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit device with operation in partia, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device with operation in partia will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1152617