Semiconductor integrated circuit device with non-volatile semico

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357 26, 357 45, 357 55, 357 235, H01L 2902

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044531745

ABSTRACT:
Disclosed is a metal oxide semiconductor integrated circuit device having an array of electrically rewritable, insulated gate type non-volatile semiconductor memory cells formed on a semiconductor substrate, read/write mode setting circuit and address designating circuits arranged corresponding to the memory cell array, those circuits being fabricated on the substrate, and a field insulating layer formed on the substrate. A cut portion is formed in the field insulating layer to surround the memory cell array.

REFERENCES:
patent: 3696274 (1972-10-01), Davis
patent: 3786318 (1974-01-01), Momoi et al.
patent: 3825945 (1974-07-01), Masuoka
patent: 3961355 (1976-06-01), Abbas et al.
patent: 3969747 (1976-07-01), Tsuyuki et al.
patent: 3978577 (1976-09-01), Bhattacharyya et al.
patent: 4122544 (1978-10-01), McElroy
patent: 4163245 (1979-07-01), Kinoshita
patent: 4247788 (1981-01-01), Bluzer
patent: 4278705 (1981-07-01), Agraz-Guerena et al.
patent: 4288807 (1981-09-01), Enzlin et al.
IBM Technical Disclosure Bulletin, vol. 20, No. 8, Jan. 1978, Charge Storage Device Fabrication, Chang, et al.
IEEE Transactions on Electron Devices, vol. ED-25, No. 8, Aug. 1978, Radiation-Hardened MNOS RAM Technology, Marraffino, et al.
Japanese Journal of Applied Physics, Supp., vol. 15, No. 7, 1976 supp. A 256 Bit Nonvolatile Static Random Access Memory with MNOS Memory Transistors, Saito, et al.
IBM Technical Disclosure Bulletin, vol. 16, No. 4, _Sep. 1973, Simultaneously Forming Memory and Support Circuits Using FETS, Anantha.
Japanese Journal of Applied Physics, vol. 13, No. 9, Sep. 1974, Circuit Array and System of MAOS Type Fully Decoded Electrically Alterable Read Only Memory-Ic, Yamaguchi et al.

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