Semiconductor integrated circuit device with built-in memories,

Details Semiconductor integrated circuit device with built-in memories, Semiconductor integrated circuit device with built-in memories,

1985-11-25

1988-11-08

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Semiconductive

365182, 365185, 365189, G11C 700, G11C 1140

Patent

active

047837640

ABSTRACT:
A data processing LSI constructing a microcomputer has an EPROM for changing a program. The EPROM can be accessed directly through the external terminals of the data processing LSI. The EPROM is statically operated when it is written with data by direct access. However, the statically operated EPROM consumes relatively high power. This power consumption by the EPROM is reduced by dynamically operating its read circuit, address decoder and so on. For example, the read circuit is constructed of a sense amplifier and a latch circuit, and the sense amplifier has its operation interrupted after the latch circuit has latched the read data. The address decoder is composed of a load MOSFET and address MOSFETs. The load MOSFET is caused to act as a precharge element in the dynamic operation and as an opertion current feeding element in the static operation.

REFERENCES:
patent: 4208728 (1980-06-01), Blahut et al.
patent: 4289982 (1981-09-01), Smith
patent: 4494187 (1985-01-01), Simpson
patent: 4581718 (1986-04-01), Oishi
patent: 4701886 (1987-10-01), Sakakibara et al.
Hitachi--"8/16 Bit Micro Computer" issued Sep. 1982, pp. 350-389.

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