Semiconductor integrated circuit device with built-in memories

Details Semiconductor integrated circuit device with built-in memories Semiconductor integrated circuit device with built-in memories

1988-10-11

1990-03-13

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

365104, 36523005, 36518903, G11C 700, G11C 1140

Patent

active

049087959

ABSTRACT:
A data processing LSI constructing a microcomputer has an EPROM for changing a program. The EPROM can be accessed directly through the external terminals of the data processing LSI. The EPROM is statically operated when it is written with data by direct access. However, the statically operated EPROM consumes relatively high power. This power consumption by the EPROM is reduced by dynamically operating its read circuit, address decoder and so on. For example, the read circuit is constructed of a sense amplifier and a latch circuit, and the sense amplifier has its operation interrupted after the latch circuit has latched the read data. The address decoder is composed of a load MOSFET and address MOSFETs. The load MOSFET is caused to act as a precharge element in the dynamic operation and as an operation current feeding element in the static operation.

REFERENCES:
patent: 4282446 (1981-08-01), McElroy
patent: 4289982 (1981-09-01), Smith
patent: 4494187 (1985-01-01), Simpson
patent: 4763303 (1988-08-01), Flannagan
patent: 4787764 (1988-11-01), Tsuchiya et al.
patent: 4835684 (1989-05-01), Kanai
IEEE Journal of Solid State Circuits, vol. SC-18, No. 5, Oct. 83, High Speed Ultra Low Power 64K CMOS EPROM with On Chip Test Functions by Knecht et al.

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