Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-08-08
2006-08-08
Smith, Bradley K. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S774000
Reexamination Certificate
active
07088001
ABSTRACT:
In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.
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Ashihara Hiroshi
Okutani Ken
Saito Tatsuyuki
Suzuki Hidenori
Tanaka Uitsu
Antonelli, Terry Stout and Kraus, LLP.
Hitachi , Ltd.
Hitachi Ulsi Systems Co., Ltd.
Menz Douglas
Smith Bradley K.
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