Static information storage and retrieval – Floating gate – Particular biasing
Patent
1998-02-26
1999-11-16
Nelms, David
Static information storage and retrieval
Floating gate
Particular biasing
36518907, G11C 1134
Patent
active
059869402
ABSTRACT:
The semiconductor integrated circuit device includes memory cells the conductive state of which is changed in accordance with the data stored therein when selected, a sensing circuit having sense nodes for sensing the data stored in the memory cell. A constant current source according to the present invention supplies a current corresponding to the leak current to be detected on the sense node, as a load current in a leak current check where the memory cell is set in a non-selected state and the leak current flowing through the memory cell is detected. Accordingly, the device can ensure a large reading margin even in checking the leak current flowing through the memory cell, prevent the increase in total area of the integrated circuit, and prevent the alternate current characteristics in the ordinary data reading from being adversely affected.
REFERENCES:
patent: 5450361 (1995-09-01), Iwahashi et al.
Atsumi Shigeru
Taura Tadayuki
Kabushiki Kaisha Toshiba
Nelms David
Tran M.
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