Semiconductor integrated circuit device using a silicon-on-insul

Details Semiconductor integrated circuit device using a silicon-on-insul Semiconductor integrated circuit device using a silicon-on-insul

1997-12-23

2000-05-09

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 25, 257508, H01L 2500, H01L 2900

Patent

active

060607483

ABSTRACT:
A semiconductor integrated circuit (IC) device has a silicon-on-insulator substrate having a semiconductor substrate, an insulating film formed on the semiconductor substrate, and a silicon layer formed on the insulating film. The semiconductor IC device includes at least one semiconductor device formed on the semiconductor substrate, and at least one semiconductor device formed on the silicon layer and operated with a power-supply voltage different from a power-supply voltage for the semiconductor device formed on the semiconductor substrate.

REFERENCES:
patent: 5097314 (1992-03-01), Nakagawa et al.
patent: 5461253 (1995-10-01), Tsuruta et al.
patent: 5627399 (1997-05-01), Fujii
patent: 5754077 (1998-05-01), Ohata et al.

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