Semiconductor integrated circuit device, production and...

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185010, C365S185100, C365S185110, C365S063000

Reexamination Certificate

active

11700085

ABSTRACT:
A semiconductor integrated device having a plurality of memory cells, each including a floating gate, a control gate and an auxiliary gate formed over a side surface of the floating gate through an insulator film. Auxiliary gates coupled to selected memory cells function to generate hot electrons and are alternately arranged with other auxiliary gates functioning to prevent write errors in the non-selected memory cells.

REFERENCES:
patent: 5095344 (1992-03-01), Harari
patent: 5247198 (1993-09-01), Homma et al.
patent: 5338952 (1994-08-01), Yamauchi
patent: 5392238 (1995-02-01), Kirisawa
patent: 5502669 (1996-03-01), Saitoh
patent: 5672529 (1997-09-01), Kato et al.
patent: 5679970 (1997-10-01), Hartmann
patent: 5719805 (1998-02-01), Masuoka
patent: 5739566 (1998-04-01), Ota
patent: 5745412 (1998-04-01), Choi
patent: 5761121 (1998-06-01), Chang
patent: 5767930 (1998-06-01), Kobayashi et al.
patent: 5780341 (1998-07-01), Ogura
patent: 5786612 (1998-07-01), Otani et al.
patent: 5787034 (1998-07-01), Ominio et al.
patent: 5808336 (1998-09-01), Miyawaki
patent: 5814543 (1998-09-01), Nishimoto et al.
patent: 5883409 (1999-03-01), Guterman et al.
patent: 5905674 (1999-05-01), Choi
patent: 5994733 (1999-11-01), Nishioka et al.
patent: 6027974 (2000-02-01), Liu et al.
patent: 6034894 (2000-03-01), Maruyama et al.
patent: 6060740 (2000-05-01), Shimizu et al.
patent: 6115287 (2000-09-01), Shimizu et al.
patent: 6121072 (2000-09-01), Choi et al.
patent: 6121670 (2000-09-01), Hisamune
patent: 6130453 (2000-10-01), Mei et al.
patent: 6134157 (2000-10-01), Takeuchi
patent: 6214669 (2001-04-01), Hisamune
patent: 6243295 (2001-06-01), Satoh
patent: 6288431 (2001-09-01), Iwasa et al.
patent: 6307807 (2001-10-01), Sakui et al.
patent: 6310374 (2001-10-01), Satoh et al.
patent: 6324101 (2001-11-01), Miyawaki
patent: 6342715 (2002-01-01), Shimizu et al.
patent: 6369410 (2002-04-01), Yamazaki et al.
patent: 6438028 (2002-08-01), Kobayashi et al.
patent: 6687156 (2004-02-01), Kobayashi et al.
patent: 6759706 (2004-07-01), Kobayashi
patent: 7015550 (2006-03-01), Sugimae et al.
patent: 2001/0001295 (2001-05-01), Odanaka et al.
patent: 2001/0011726 (2001-08-01), Hayashi et al.
patent: 2002/0096681 (2002-07-01), Yamazaki et al.
patent: 2002/0125510 (2002-09-01), Ohyanagi et al.
patent: 2002/0191458 (2002-12-01), Kobayashi et al.
patent: 0245515 (1987-11-01), None
patent: 0349884 (1990-01-01), None
patent: 405048108 (1993-02-01), None
patent: 406252417 (1994-09-01), None
patent: 9129853 (1997-05-01), None
patent: 2694618 (1997-12-01), None
patent: 9321157 (1997-12-01), None
patent: 02000174241 (2000-06-01), None
“A New Flash-Erase EEprom Cell With A Sidewall Select-Gate On Its Source Side” N. Naruke, IEDM-1989, pp. 603-606.
“Ohyo Butsuri Or Applied Physics” vol. 65, No. 11, pp. 1114-1124.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor integrated circuit device, production and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device, production and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device, production and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3947836

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.