Semiconductor integrated circuit device, memory module,...

Details Semiconductor integrated circuit device, memory module,... Semiconductor integrated circuit device, memory module,...

2005-11-22

2005-11-22

Elms, Richard (Department: 2824)

Static information storage and retrieval

Read/write circuit

Data refresh

C365S185250, C365S189080

Reexamination Certificate

active

06967888

ABSTRACT:
To improve the efficiency for repairing a defect of an LSI, a semiconductor integrated circuit device is provided which includes a central processing unit, an electrically reprogrammable nonvolatile memory and a volatile memory, sharing a data bus, which utilizes stored information of the nonvolatile memory to repair a defect of the volatile memory. The volatile memory includes a volatile storage circuit for latching the repair information for repairing a defective normal memory cell with a redundancy memory cell. The nonvolatile memory reads out the repair information from itself in response to an instruction initialization, and the volatile storage circuit latches the repair information. A fuse program circuit is not needed for the detect repair, and a defect which occurs after a burn-in can be newly repaired so that the new defect can be repaired even after packaging.

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Document 6-243677; date: Feb. 9, 1994—English translation.

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