Semiconductor integrated circuit device including OTP...

Static information storage and retrieval – Read/write circuit – Minor loop

Reexamination Certificate

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C365S230030, C365S185220

Reexamination Certificate

active

07046569

ABSTRACT:
A semiconductor integrated circuit device includes a storage element, state sensing circuit, and control circuit. Information is programmed in the storage element by electrically irreversibly changing the element characteristics. The state sensing circuit is configured to sense the irreversibly changed state of the storage element in distinction from an unchanged state. The control circuit is configured to change the sensibility of the state sensing circuit.

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Jinbong Kim, et al., “Three-Transistor One-Time Programmable (OTP) ROM Cell Array Using Standard CMOS Gate Oxide Antifuse”, IEEE Electron Device Letters, vol. 24, No. 9, Sep. 2003, pp. 589-591.
U.S. Appl. No. 11/231,983, filed Sep. 22, 2005, Nakano et al.
U.S. Appl. No. 11/231,795, filed Sep. 22, 2005, Nakayama et al.
U.S. Appl. No. 11/221,943, filed Sep. 9, 2005, Namekawa et al.

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