Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-24
2005-05-24
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S374000, C257S202000, C257S206000, C257S208000, C257S401000
Reexamination Certificate
active
06897499
ABSTRACT:
A gate electrode of each MISFET is formed on a substrate in an active region whose periphery is defined by an element isolation trench, and crosses the active region so as to extend from one end thereof to the other end thereof. The gate electrode has a gate length in a boundary region defined between the active region and the element isolation trench which is greater than a gate length in a central portion of the active region. The gate electrode is configured in an H-type flat pattern. Further, the gate electrode covers the whole of one side extending along a gate-length direction, of the boundary region defined between the active region L and the element isolation trench, and parts of two sides thereof extending along a gate-width direction. The MISFETs are formed in electrically separated wells and are connected in series to constitute part of a reference voltage generating circuit.
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Higuchi Mitsuhiro
Imato Koichi
Komori Kazuhiro
Miwa Hideo
Nishida Akio
Antonelli Terry Stout & Kraus LLP
Hitachi ULSI Systems Co. Ltd.
Renesas Technology Corp.
Soward Ida M.
Zarabian Amir
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