Semiconductor integrated circuit device including an improved se

Details Semiconductor integrated circuit device including an improved se Semiconductor integrated circuit device including an improved se

1994-12-07

1997-08-26

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257347, 257506, 257513, 257517, H01L 2900, H01L 2701

Patent

active

056613296

ABSTRACT:
A semiconductor integrated circuit device includes an element separating first and second grooves formed to surround active regions to be formed with a semiconductor element. In addition a third groove is formed to surround at least a portion of the first groove, when viewed from a plane view. In the semiconductor integrated circuit device, the active regions and an element separating region of a silicon layer are insulated from each other by the separating grooves extending from the main surface of the silicon layer to an underlying insulating layer, and are fed with a common fixed potential.

REFERENCES:
patent: 5168341 (1992-12-01), Kumagai et al.
patent: 5283461 (1994-02-01), Beasom
patent: 5362667 (1994-11-01), Linn et al.
patent: 5381033 (1995-01-01), Matsuzaki
Kluwer Academic Publication, "Bi-CMOS Technology and Applications", edited by A. Alvarez, pp. 67-68.

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