Resist composition and process for forming resist pattern

Details Resist composition and process for forming resist pattern Resist composition and process for forming resist pattern

1995-05-10

1996-12-17

Dote, Janis L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430910, 522 31, 522 33, 522 49, 522153, G03C 1492

Patent

active

055852190

ABSTRACT:
A resist composition and a process for forming a resist pattern using a resist composition are disclosed. The present composition includes 100 parts by weight of a copolymer of a 2-norbornene-2-substituent unit and an acrylic acid ester unit of the formula I; ##STR1## wherein, X is a cyano or chloro group, R is tert-butyl, dimethylbenzyl, or tetrahydropyranyl, m is an integer of 9 to 2390, and n is an integer of 21 to 5180, and 1 to 20 parts by weight of a photo acid generator. A finely-resolved resist pattern with high sensitivity and good dry etch resistance is obtained by the present composition and present process for forming the resist pattern.

REFERENCES:
patent: 4751168 (1988-06-01), Tsuchiya
patent: 4912018 (1990-03-01), Osuch
patent: 5118585 (1992-06-01), Schwalm
patent: 5212043 (1993-05-01), Yamamoto
patent: 5399647 (1995-03-01), Nozaki

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