Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-14
2010-06-22
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S385000, C257S412000, C257S758000, C257S760000, C257SE27060
Reexamination Certificate
active
07741682
ABSTRACT:
A semiconductor integrated circuit device having a pair of adjacent MOS transistors and a contact plug33, buried into a contact hole formed by a self-aligned contact process using a silicon nitride film as an etching stopper and electrically connected to diffusion layers2and3constituting the MOS transistor on a silicon substrate21surrounded by a device isolation region4: wherein a silicon layer28is formed on the exposed surface of the diffusion layers2and3by selective epitaxial growth, which is in contact with an end of each gate insulation film22on the diffusion layer side; an insulation film27′composed of a silicon oxynitride film or a silicon oxide film is buried between the each gate electrode and the silicon layer28while being in contact with the gate insulation film22; and the silicon nitride films26, 29′, and32are isolated from the silicon substrate21by the insulation film27′.
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Japanese Office Action dated May 14, 2008 with Partial English Translation.
Elpida Memory Inc.
McGinn IP Law Group PLLC
Nguyen Duy T
Pham Thanh V
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