Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-07-20
1993-06-29
LaRoche, Eugene R.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257487, 257488, 257501, 257506, 257529, H01L 2182, H01L 2710, H01L 2702
Patent
active
052237354
ABSTRACT:
A semiconductor integrated circuit device in which circuit functions can be remedied or changed by severing at least a portion of a circuit pattern and a method for producting such semiconductor integrated circuit device. The circuit pattern is formed on the semiconductor substrate. A field shield plate is formed on the major surface of the semiconductor substrate for electrically separating respective elements constituting the circuit. The circuit pattern includes a fuse element. The fuse element is provided on the field shield plate. The portion of the field shield plate lying directly below the fuse element is isolated from other portions of the field shield plate. In such semiconductor integrated circuit device, the portion of the field shield plate lying directly below the fuse element is separated from other portions of the field shield plate, so that short-circuiting between the semiconductor substrate and the field shield plate cannot occur even when the laser beam is irradiated with a laser beam deviation at the time of severing of the fuse element.
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Arimoto Kazutami
Furutani Kiyohiro
Kinoshita Mitsuya
LaRoche Eugene R.
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Viet Q.
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