Semiconductor integrated circuit device in which a conductive fi

Details Semiconductor integrated circuit device in which a conductive fi Semiconductor integrated circuit device in which a conductive fi

1998-06-29

2000-02-22

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257763, 257306, 257310, H01L 2348, H01L 27108

Patent

active

060283602

ABSTRACT:
The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and TiN film 71 on the silicon oxide film 64 are etched back to leave only the inside of the via-hole 66 and form a plug 73. Then, a TiN film 74, Al-alloy film 75, and Ti film 76 are deposited on the silicon oxide film 64 including the surface of the plug 73 by the sputtering method and thereafter, the Ti film 76, Al-alloy film 75, and TiN film 74 are patterned to form second-layer wirings 77 and 78.

REFERENCES:
patent: 5420072 (1995-05-01), Fiordalice et al.
patent: 5654581 (1997-08-01), Radosevich et al.
patent: 5801097 (1998-09-01), Chang

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