Semiconductor integrated circuit device having superconductive l

Details Semiconductor integrated circuit device having superconductive l Semiconductor integrated circuit device having superconductive l

1992-04-06

1993-11-30

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

257 31, 257 32, 257 33, 505874, H01L 2900, H01L 3922

Patent

active

052668150

ABSTRACT:
Technology for using a wiring of a superconductive material in semiconductor integrated circuit device. An isolation layer and/or a barrier layer are provided for preventing diffusion of harmful composition of the superconductive material for the semiconductor device. Control of a circuit can be made utilizing the characteristics of a superconductive material. Also, the characteristics of a superconductive material may be controlled. A method of forming a layer of superconductive material, well compatible with the widely used process of manufacturing integrated circuit devices, is also disclosed.

REFERENCES:
patent: 4464065 (1984-08-01), Wolf et al.
patent: 4660061 (1987-04-01), Sweeny et al.
patent: 4724475 (1988-02-01), Matsuda
patent: 4837609 (1989-06-01), Gurvitch et al.
A. I. Braginski, "Material Constraints on Electronic Applications of Oxide Superconductors" (Proc. HTSC-M.sup.2) Interlaken Apr. 14, 1988.
J. R. Gavaler et al., "Fabrication of High-T.sub.c Superconducting YBa.sub.2 Cu.sub.3 O.sub.7 Films" (Proc. MRS Spring Mtg.) 1988, Apr. 14, 1988.
Koinuma et al. "Chemical Interaction Between Ba.sub.2 YCu.sub.3 O.sub.7-.delta. and Substrate Materials in the Solid State" Jap. J. Appl. Phys. vol. 27 (7) Jul. 1988 pp. L1216-L1218.

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