Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-04-03
2007-04-03
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S226000, C365S227000
Reexamination Certificate
active
11030164
ABSTRACT:
A semiconductor integrated circuit device, which drives a first region and a second region provided via capacitance to a positive internal power supply and a negative internal power supply respectively, comprises a first internal power supply generation circuit that drives the first region to the positive internal power supply. In addition, the semiconductor integrated circuit device has a power supply sequencer that drives the first region to an overdrive potential that is higher than the positive internal power supply potential by starting up the first internal power supply generation circuit at power supply startup while clamping the second region at a predetermined potential and then by canceling the clamped state of the second region, steps down the first region from the overdrive potential toward the positive internal power supply potential so as to step down the second region to a negative potential through coupling of the capacitance.
REFERENCES:
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patent: 6650089 (2003-11-01), Freeman et al.
patent: 2002/0054517 (2002-05-01), Takeuchi et al.
patent: 60-261099 (1985-12-01), None
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patent: 06-215563 (1994-08-01), None
Arent & Fox LLP
Fujitsu Limited
Le Thong Q.
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