Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-06
2011-12-06
Pham, Hoai V (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21430, C257SE21530, C257SE21550, C257SE21640, C257SE27063, C257SE27067
Reexamination Certificate
active
08072032
ABSTRACT:
Latchup is prevented from occurring accompanying increasingly finer geometries of a chip. NchMOSFET N1and PchMOSFET P1form a CMOS circuit including: NchMOSFET N2whose gate, drain and back gate are connected to back gate of N1and PchMOSFET P2whose gate, drain and back gate are connected to back gate of P1. Source of N2is connected to source of N1. Source of P2is connected to source of P1. N2is always connected between the grounded source of N1and the back gate of N1, while P2is connected between source of P1connected to a power supply and the back gate of P1. Each of N2and P2functions as a voltage limiting element (a limiter circuit).
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Chinese Patent Office issued a Chinese Office Action dated Oct. 30, 2009, Application No. 200710139935.8.
Jones Eric
Pham Hoai V
Renesas Electronics Corporation
Young & Thompson
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