Semiconductor integrated circuit device having gates arranged in

Details Semiconductor integrated circuit device having gates arranged in Semiconductor integrated circuit device having gates arranged in

1997-07-14

2000-09-19

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257343, H01L 2976

Patent

active

061216577

ABSTRACT:
In a semiconductor integrated circuit device using a MOS type transistor as a transistor for the output of a great current, the source and drain of the transistor is formed by connecting in parallel a plurality of source regions and drain regions surrounded by a gate electrode.

REFERENCES:
patent: 4271424 (1981-06-01), Inayoshi et al.
patent: 4631563 (1986-12-01), Iizuka
patent: 5355008 (1994-10-01), Moyer et al.
patent: 5635742 (1997-06-01), Hoshi et al.

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