Semiconductor integrated circuit device having field shield MOS

Details Semiconductor integrated circuit device having field shield MOS Semiconductor integrated circuit device having field shield MOS

1996-04-29

2000-11-07

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257488, 257491, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

061440809

ABSTRACT:
A semiconductor integrated circuit has P-channel active MOSFETs and N-channel active MOSFETs formed in a semiconductor substrate. In order to electrically isolate the active MOSFETs, the semiconductor integrated circuit has P-channel field shield MOS devices and N-channel field shield MOS devices. The P-channel field shield MOS devices have field shield electrodes which are laid on regions between impurity diffusion regions of the P-channel active MOSFETs. The N-channel field shield MOS devices have field shield electrodes which are laid on regions between impurity diffusion regions of N-channel active MOSFETs. A P-channel field shield voltage, which is higher than a power supply voltage of the semiconductor integrated circuit, is supplied to the field shield electrodes of the P-channel field shield MOS device to turn the P-channel field shield MOS devices to an OFF-state to electrically isolate the P-channel active MOSFETs. An N-channel field shield voltage, which is lower than a ground level of the semiconductor integrated circuit, is supplied to the field shield electrodes of the N-channel field shield MOS devices to turn the N-channel field shield MOS devices to an OFF-state to electrically isolate the N-channel active MOSFETs.

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