Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-08-16
2005-08-16
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S230030, C365S230060
Reexamination Certificate
active
06930908
ABSTRACT:
A semiconductor integrated circuit device includes unit cells, memory cell blocks, bit lines, word lines, block select signal lines, plate lines, and a plate line driver. The unit cell includes a cell transistor and a ferroelectric capacitor connected between a source and a drain of the cell transistor. The memory cell block includes the unit cells connected in series between a first terminal and a second terminal and a block select transistor connected between the second terminal and a third terminal. The bit line connects commonly the third terminals of the blocks. The word line connects commonly gates of cell transistors in the blocks. The block select signal line connects commonly gates of block select transistors in the blocks. The plate line connects commonly the first terminals of the blocks. The plate line driver is connected to the plate lines and applies a potential to the plate lines.
REFERENCES:
patent: 6366490 (2002-04-01), Takeuchi et al.
patent: 6507510 (2003-01-01), Takashima
D. Takashima, et al., “High-Density Chain Ferroelectric Random-Access Memory (CFRAM)”, Symposium on VLSI Circuits Digest of Technical Papers, 1997, pp. 83-84.
Hoya Katsuhiko
Takashima Daisaburo
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