Semiconductor integrated circuit device having ferroelectric...

Details Semiconductor integrated circuit device having ferroelectric... Semiconductor integrated circuit device having ferroelectric...

2005-08-16

2005-08-16

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S230030, C365S230060

Reexamination Certificate

active

06930908

ABSTRACT:
A semiconductor integrated circuit device includes unit cells, memory cell blocks, bit lines, word lines, block select signal lines, plate lines, and a plate line driver. The unit cell includes a cell transistor and a ferroelectric capacitor connected between a source and a drain of the cell transistor. The memory cell block includes the unit cells connected in series between a first terminal and a second terminal and a block select transistor connected between the second terminal and a third terminal. The bit line connects commonly the third terminals of the blocks. The word line connects commonly gates of cell transistors in the blocks. The block select signal line connects commonly gates of block select transistors in the blocks. The plate line connects commonly the first terminals of the blocks. The plate line driver is connected to the plate lines and applies a potential to the plate lines.

REFERENCES:
patent: 6366490 (2002-04-01), Takeuchi et al.
patent: 6507510 (2003-01-01), Takashima
D. Takashima, et al., “High-Density Chain Ferroelectric Random-Access Memory (CFRAM)”, Symposium on VLSI Circuits Digest of Technical Papers, 1997, pp. 83-84.

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