Semiconductor integrated circuit device having elements of diffe

Details Semiconductor integrated circuit device having elements of diffe Semiconductor integrated circuit device having elements of diffe

1994-10-28

1996-04-30

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Including region containing crystal damage

257610, 257611, 257501, H01L 2932

Patent

active

055127770

ABSTRACT:
A semiconductor substrate includes a P-type silicon substrate and an N-type epitaxial silicon layer formed on the substrate. The N-type epitaxial silicon layer is isolatedly separated into first and second N-type island regions by means of a P-type silicon region which extends from the major surface of the epitaxial silicon layer to the substrate. A power element is formed in the first N-type region. The current path of the power element extends in the first N-type island region and in the substrate, i.e., reaches a deep portion of the substrate from the major surface. The logic element is formed in the second N-type island region. The current path of the element extends only in the second N-type island region, i.e., reaches a shallow portion of the substrate from the major surface. A carrier-recombination-center layer is formed in a deep portion of the substrate, and overlaps the current path of the power element. The layer does not influence the current path of the logic element which extends only in a shallow portion of the substrate.

REFERENCES:
patent: 4053925 (1977-10-01), Burr et al.
patent: 4881112 (1989-11-01), Matsushita
patent: 4881115 (1989-11-01), Lesk et al.
patent: 4920396 (1990-04-01), Shinohara et al.
Patent Abstracts of Japan, vol. 13, No. 184, (E-751), Apr. 28, 1989 and JP-01-010658, Jan. 1, 1989.

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