Semiconductor integrated circuit device having component transis

Details Semiconductor integrated circuit device having component transis Semiconductor integrated circuit device having component transis

1994-11-29

1996-05-14

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257328, 257360, 257750, 257758, H01L 2362

Patent

active

055170501

ABSTRACT:
An inverter incorporated in a semiconductor integrated circuit device is implemented by a series combination of a p-channel enhancement type field effect transistor and an n-channel enhancement type field effect transistor coupled between a positive power voltage line and a ground voltage line, the p-channel enhancement type field effect transistor and the n-channel enhancement type field effect transistor have a common gate electrode coupled through normally-off protective transistors to the positive power voltage line and the ground voltage line, and excess electric charges are discharged through a parasitic diode between the drain region and a substrate of either protective transistor so as to prevent gate oxide films from the excess electric changes.

REFERENCES:
patent: 5021843 (1991-06-01), Ohmi
patent: 5281828 (1994-01-01), Muragishi

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit device having component transis does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device having component transis, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device having component transis will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1898041