Semiconductor integrated circuit device having capacitance eleme

Details Semiconductor integrated circuit device having capacitance eleme Semiconductor integrated circuit device having capacitance eleme

1996-01-26

1999-03-09

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257903, 257904, 257393, H01L 2711

Patent

active

058804978

ABSTRACT:
A SRAM having its memory cell constructed to include transfer MISFETs to be controlled by word lines and a flip-flop circuit having driver MISFETs and load MISFETs. Plate electrodes of large area fixed on predetermined power source lines are arranged over the load MISFETs such that the plate electrodes over the offset region of the load MISFETs are formed with an opening. A silicon nitride film having a thickness permeable to hydrogen but not to humidity is formed over the transfer MISFETs and the driver MISFETs formed over the main surface of a semiconductor substrate and the load MISFETs formed of a polycrystalline silicon film deposited on the driver MISFETs.

REFERENCES:
patent: 5194749 (1993-03-01), Meguro et al.
patent: 5239196 (1993-08-01), Ikeda et al.
patent: 5326989 (1994-07-01), Muragishi
patent: 5406107 (1995-04-01), Yamaguchi
patent: 5508540 (1996-04-01), Ikeda et al.
A Polysilicon Transistir Technology for Large Capacity SRAMs, Ikeda, et al., Hitachi, Ltd., pp. 469-472.

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